silicon pin photo diode high speed sensitivity high speed sensitivity 1. structure 1.1 chip size : 1.60mm x 1.60mm 1.2 chip thickness : 400 20um 1.3 metallization : top - al, bottom - au 1.4 passivation : silicon nitride 1.5 bonding pad size - cathode(top) : 300um x 300um - anode(bottom) 1.6 active area : 1.40mm x 1.40mm 2. electrical-optical characteristics (ta=25 ) symbol min typ max unit condition v op -0.3 -0.32 v note(1) i sc -16 -20 ua note(1) nm p 940 nm v f -0.5 -1.3 v if=10ma i d -5 -10 na vr=10v bv r -30 v ir=10ua note(1) : parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856k. 3. maximum ratings ( ta=25 ) symbol bv r t j eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr auk corp. parameter peak sensing wavelength forward voltage dark current OPD1616N parameter open circuit voltage short circuit current spectrum sensitivity reverse breakdown voltage junction temperature rating -30 150 reverse breakdown voltage unit v 430~1,100 unit : ?
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